Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio
Takayuki Tahara (1), Hayato Koike (2), Makoto Kameno (1,2,3), Yuichiro, Ando (1), Kazuhito Tanaka (3), Shinji Miwa (3), Yoshishige Suzuki (3) and, Masashi Shiraishi (1) ((1) Kyoto Univ., (2) TDK Co., (3) Osaka Univ)
TL;DR
This paper reports the successful operation of a silicon spin MOSFET at room temperature with high on/off ratios for both current and spin signals, demonstrating its potential for practical spintronic devices.
Contribution
It introduces a room-temperature silicon spin MOSFET with high on/off ratios, utilizing a back-gated structure to control spin and charge transport.
Findings
High on/off ratio of source-drain current at room temperature
Effective gate voltage application enables spin MOSFET operation
Potential for practical spintronic applications
Abstract
We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way to practical use of the Si spin MOSFET.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Quantum and electron transport phenomena