Mott transitions and Novel Orders in Multi-Orbital Models: The Relevance of Structural "Double Exchange"

TL;DR

This paper investigates how structural GdFeO3 octahedral tilt influences Mott transitions and novel orbital orders in multi-orbital models, revealing a new 'double exchange' mechanism that affects electronic phases and potential material engineering.

Contribution

It introduces a generalized principle where the GdFeO3 tilt acts as a structural 'double exchange,' affecting Mott transitions and orbital orderings in transition-metal oxides.

Findings

GdFeO3 tilt acts as a structural 'double exchange' contrary to traditional understanding.

Identifies a tilt-induced phase transition from Mott insulator to incoherent metal.

Proposes the incoherent metal as an orbital analogue of the FL* state with fractionalised orbitons.

Abstract

In real transition-metal oxides, the so-called GdFeO3 octahedral tilt is long known to be a relevant control parameter influencing the range of orbital and magnetic ordered states found across families of cubic perovskite families. Their precise role in the interplay between itinerance and localisation, long known to underpin Mottness in d-band oxides, has however received much less attention. We analyse the relevance of the GdFeO3 tilt in detail in a representative setting of a partially-filled e g orbital system. We identify a new generalised principle of broad relevance, namely, that this tilt acts like a structural "double exchange" and acts contrary to the well-known Anderson-Hasegawa double exchange. As a function of this tilt, therefore, a phase transition from a Mott-Hubbard insulator to an incoherent bad-metal occurs as an effective band-width-controlled Mott transition. We analyse the incoherent metal in detail by studying one- and two-particle spectral responses and propose that this selective-metal is a novel orbital analogue of the FL* state with fractionalised orbitons. Finally, we apply these ideas to qualitatively discuss the effect of strain on thin films of such d-band oxides on suitable substrates, and discuss the exciting possibility of engineering novel ordered phases, such as unconventional circulating currents, nematics and superconductors, by suitable strain engineering in TMO thin films.