Control of excitons in multi-layer van der Waals heterostructures

TL;DR

This paper experimentally investigates how to control excitons in atomically thin van der Waals heterostructures using various external parameters, advancing understanding of excitonic behavior in layered materials.

Contribution

It demonstrates the control of neutral and charged excitons in ext{MoSe}_2/hBN heterostructures through gate voltage, temperature, and optical excitation parameters.

Findings

Exciton emission can be tuned by gate voltage.

Charged and neutral excitons respond differently to external controls.

Optical excitation parameters influence exciton emission properties.

Abstract

We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of \Mo* and hexagonal boron nitride (hBN). The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.