Electron back scattering in CNTFETs

TL;DR

This paper introduces a new analytical model for CNTFETs that accurately captures electron back scattering effects, extending applicability to high bias voltages for analog applications, and aligns well with experimental data.

Contribution

It presents a novel non-ballistic analytical model for CNTFETs that incorporates electron-phonon scattering and electron accumulation effects, improving upon previous models.

Findings

Model agrees with experimental data for highly doped CNTFETs

Accurately describes electron back scattering at high bias voltages

Extends modeling capabilities for analog applications

Abstract

A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The new model comprises an improved description of electron-phonon scattering mechanism taking into account the accumulation of electrons at the bottom of conduction subband due to back scattering by optical phonons. The model has been justified by a Boltzmann transport equation solver. The simulation results are found to be in agreement with experimental data for highly doped CNTFETs.