Room-temperature spin-orbit torque in NiMnSb
C. Ciccarelli, L. Anderson, V. Tshitoyan, A. J. Ferguson, F. Gerhard,, C. Gould, L. W. Molenkamp, J. Gayles, J. Zelezny, L. Smejkal, Z. Yuan, J., Sinova, F. Freimuth, T. Jungwirth

TL;DR
This paper demonstrates room-temperature spin-orbit torques in NiMnSb, a magnetic Heusler compound, through electrical measurements and theoretical calculations, highlighting its potential for spintronic applications.
Contribution
It provides the first experimental evidence of room-temperature spin-orbit torques in NiMnSb, supported by relativistic density-functional theory calculations.
Findings
Detection of effective fields with Dresselhaus symmetry at room temperature
Agreement between experimental measurements and theoretical predictions
Identification of NiMnSb as a promising material for spintronic devices
Abstract
Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electrical switching in an antiferromagnetic memory at room temperature. When the inversion-partner sites are occupied by different atoms, a non-zero global spin-polarization is generated by the applied…
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