Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt-(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3-LaNiO3 heterostructures

TL;DR

This study demonstrates reversible switching of photovoltaic and rectification properties in Si-integrated heterostructures through polarization control, showing significant changes in photocurrent and voltage after external poling.

Contribution

It introduces a novel heterostructure with switchable photovoltaic and diode functionalities enabled by polarization flipping at the interface.

Findings

Photocurrent increases from 32 to 303 microAmp/cm² after poling.

Open-circuit voltage varies from 0.04 V to 0.32 V with poling.

Switchable rectification observed due to Schottky barrier modulation.

Abstract

We studied switchable photovoltaic and photo-diode characteristics of Pt (Bi0.9Sm0.1)(Fe0.97Hf0.03)O3 LaNiO3 (Pt BSFHO LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt BSFHO LNO shows JSC 32 microAmp cm2 and VOC 0.04 V, which increase to maximum value of JSC 303 ( 206) microAmp cm2 and VOC 0.32 (0.26) V after upward (downward) poling at 8 V. We believe that Schottky barrier modulation by polarization flipping at Pt BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt BSFHO LNO heterostructures.