Controllable intrinsic DC spin/valley Hall conductivity in ferromagnetic silicene: Exploring a fully spin/valley polarized transport

TL;DR

This paper investigates how electric fields influence intrinsic DC spin and valley Hall conductivities in doped ferromagnetic silicene, revealing conditions for fully spin or valley polarized transport.

Contribution

It provides a theoretical framework for electrically controlling spin and valley polarized transport in ferromagnetic silicene, extending previous results to include electric field effects.

Findings

Derived a general relation for transverse Hall conductivity using Kubo formalism.

Identified conditions for achieving fully spin or valley polarized transport.

Showed that results reduce to known cases when exchange field is zero.

Abstract

We study intrinsic DC spin and valley Hall conductivity in doped ferromagnetic silicene in the presence of an electric filed applied perpendicular to silicene sheet. By calculating its energy spectrum and wavefunction and by making use of Kubo formalism, we obtain a general relation for the transverse Hall conductivity which can be used to obtain spin- and valley-Hall conductivity. Our results, in the zero limit of the exchange field, reduces to the previous results. Furthermore we discuss electrically tunable spin and valley polarized transport in ferromagnetic silicene and obtain the necessary conditions for observing a fully spin or valley polarized transport.