Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

TL;DR

This study systematically investigates the dielectric breakdown of hexagonal boron nitride (BN), revealing layer-by-layer failure mechanisms and defect formation, which differ from traditional amorphous oxides, using conductive atomic force microscopy.

Contribution

It provides the first detailed analysis of BN's dielectric breakdown behavior, demonstrating layer-specific failure and defect anisotropy in layered 2D materials.

Findings

BN has a dielectric strength of ~12 MV/cm, comparable to SiO2.

BN fractures into triangular fragments upon breakdown.

Breakdown can be halted mid-process, leaving electrically inactive BN layers.

Abstract

Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we report a systematic investigation of the dielectric breakdown characteristics of BN using conductive atomic force microscopy. The electric field strength was found to be ~12 MV/cm, which is comparable to that of conventional SiO2 oxides because of the covalent bonding nature of BN. After the hard dielectric breakdown, the BN fractured like a flower into equilateral triangle fragments. However, when the applied voltage was terminated precisely in the middle of the dielectric breakdown, the formation of a hole that did not penetrate to the bottom metal electrode was clearly observed. Subsequent I-V measurements of the hole indicated that the BN layer remaining in the hole was still electrically inactive. Based on these observations, layer-by-layer breakdown was confirmed for BN with regard to both physical fracture and electrical breakdown. Moreover, statistical analysis of the breakdown voltages using a Weibull plot suggested the anisotropic formation of defects. These results are unique to layered materials and unlike the behavior observed for conventional 3D amorphous oxides.