Coherent gigahertz phonons in Ge$_{2}$Sb$_{2}$Te$_{5}$ phase-change materials

TL;DR

This study uses ultrashort laser pulses to investigate gigahertz phonons in Ge$_{2}$Sb$_{2}$Te$_{5}$ films, revealing how phonon decay varies with film thickness and phase, and modeling the decay mechanisms.

Contribution

It provides the first detailed analysis of coherent gigahertz phonons in GST films, including their decay mechanisms and dependence on phase and thickness.

Findings

Decay rate of phonons decreases with increasing film thickness.

Crystalline GST exhibits larger phonon scattering and attenuation than amorphous GST.

The decay mechanisms are well modeled by phonon-defect scattering and interface attenuation.

Abstract

Using $\approx$40 fs ultrashort laser pulses, we investigate the picosecond acoustic response from a prototypical phase change material, thin Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) films with various thicknesses. After excitation with a 1.53 eV-energy pulse with a fluence of $\approx$ 5 mJ/cm$^{2}$, the time-resolved reflectivity change exhibits transient electronic response, followed by a combination of exponential-like strain and coherent acoustic phonons in the gigahertz (GHz) frequency range. The time-domain shape of the coherent acoustic pulse is well reproduced by the use of the strain model by Thomsen et al. (Phys. Rev. B 34, 4129, 1986). We found that the decay rate (the inverse of the relaxation time) of the acoustic phonon both in the amorphous and in the crystalline phases decreases as the film thickness increases. The thickness dependence of the acoustic phonon decay is well modeled based on both phonon-defect scattering and acoustic phonon attenuation at the GST/Si interface, and it is revealed that those scattering and attenuation are larger in crystalline GST films than those in amorphous GST films.