Structural and electronic properties of epitaxially-strained LaVO_3 from density functional theory and dynamical mean-field theory
Gabriele Sclauzero, Claude Ederer

TL;DR
This study uses DFT and DMFT to explore how epitaxial strain affects LaVO_3's structure and electronic properties, revealing strain-induced symmetry changes and the robustness of its Mott-insulating state.
Contribution
It provides new insights into the strain-dependent structural and electronic behavior of LaVO_3, combining DFT and DMFT methods to analyze different growth orientations and magnetic states.
Findings
P2_1/m orientation favored under strong compressive strain
Bulk LaVO_3 remains Mott-insulating under typical epitaxial strains
Stronger compressive strain affects orbital fluctuations and bond angles
Abstract
The effect of epitaxial strain on the structural and electronic properties of LaVO_3 is investigated through density functional theory (DFT) and dynamical mean field theory (DMFT). Two different growth orientations of the crystal are considered, one preserving the bulk Pbnm space-group symmetry and another giving rise to a symmetry lowering to P2_1/m. In the nonmagnetic DFT structures, the two growth orientations are equally favored for all tensile strains considered here, as well as for compressive strains weaker than -3%. For stronger compressive strains, the P2_1/m orientation is favored and shows a complete suppression of octahedral tilts along the out-of-plane direction. Magnetically-ordered structures do not show a complete tilt suppression, but the trend points to a similar reduction of the out-of-plane V-O-V bond angles under compressive strain. Our DMFT calculations show that,…
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