Polaronic-Quasiparticle Picture for Generation Dynamics of Coherent Phonons in Semiconductors: Transient and Non-Linear Fano Resonance

TL;DR

This paper introduces a polaronic-quasiparticle model to analyze the generation and dynamics of coherent phonons in semiconductors, revealing potential transient Fano resonance effects due to quantum interference.

Contribution

The study develops a novel polaronic-quasiparticle framework to describe coherent phonon generation and transient Fano resonance in semiconductors, extending understanding of quantum interference effects.

Findings

Phonon energy states are embedded in a continuum of quasiboson eigenstates.

Transient Fano resonance may manifest in non-linear optical systems.

Quantum interference effects are observed immediately after ultrashort laser excitation.

Abstract

We examine generation dynamics of coherent phonons (CPs) in both of polar and non-polar semiconductors -- such as GaAs and Si -- based on a polaronic-quasiparticle (PQ) model. In the model concerned, the PQ operator is composed of two kinds of operators. One is a quasiboson operator -- defined as a linear combination of a set of pairs of electron operators -- and the other is a longitudinal optical (LO) phonon operator. The problem of transient and non-linear Fano resonance (FR) is tackled in particular; the vestige of this quantum interference effect was observed exclusively in lightly $n$-doped Si immediately after carriers were excited by an ultrashort pulse-laser [M. Hase et. al., Nature 426, 51 (2003)], though not observed yet in GaAs. It is shown that the phonon energy state is embedded in a continuum state formed by a set of adiabatic eigenstates of the quasiboson. This result implies the possibility of manifestation of the transient FR in the present optically-non-linear system.