Electric-field-induced superconductivity in electrochemically-etched ultrathin FeSe films on SrTiO3 and MgO
J. Shiogai, Y. Ito, T. Mitsuhashi, T. Nojima, and A. Tsukazaki

TL;DR
This study demonstrates that applying an electric field to ultrathin FeSe films can induce high-temperature superconductivity, expanding the critical thickness and enabling electrostatic control, regardless of substrate material.
Contribution
It introduces a top-down electrochemical etching method combined with electric-field application to investigate and control high-TC superconductivity in ultrathin FeSe films.
Findings
Superconductivity around 40 K observed in FeSe on MgO.
Electric-field extends the critical thickness for superconductivity up to 10-unit-cells.
Electrostatic control enables tuning of the insulator-superconductor transition.
Abstract
Among the recently discovered iron-based superconductors, ultrathin films of FeSe grown on SrTiO3 substrates have uniquely evolved into a high superconducting-transition-temperature (TC) material. The mechanisms for the high-TC superconductivity are ongoing debate mainly with the superconducting gap characterized with in-situ analysis for FeSe films grown by bottom-up molecular-beam epitaxy. Here, we demonstrate the alternative access to investigate the high-TC superconductivity in ultrathin FeSe with top-down electrochemical etching technique in three-terminal transistor configuration. In addition to the high-TC FeSe on SrTiO3, the electrochemically etched ultrathin FeSe transistor on MgO also exhibits superconductivity around 40 K, implying that the application of electric-field effectively contributes to the high-TC superconductivity in ultrathin FeSe regardless of substrate…
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