Multilayer Pt/Al Based Ohmic contacts for AlGaN/GaN Heterostructures Stable up to 600oC Ambient Air

TL;DR

This paper introduces a Pt/Al multilayer ohmic contact for AlGaN/GaN heterostructures that remains stable and maintains excellent electrical properties after prolonged exposure to high temperatures in air, suitable for extreme environment applications.

Contribution

The study demonstrates a novel Pt/Al multilayer metallization with high thermal stability and reliable electrical performance after 600°C aging in air.

Findings

Stable ohmic contact after 100 hours at 600°C in air

Excellent linearity in I-V characteristics post-aging

Potential for extreme environment device applications

Abstract

In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The fabricated stack shows excellent stability after more than 100 hours of continuous aging at 600oC in air. Measured I-V characteristics of the fabricated samples show excellent linearity after the aging. The Pt/Al-based metallization shows great potential for future device and sensor applications in extreme environment conditions.