A Nonlinear HP-Type Complementary Resistive Switch

TL;DR

This paper introduces a nonlinear model for the HP-type complementary resistive switch, expanding the memristor concept and enabling improved simulation and analysis of CRS devices.

Contribution

The paper proposes a nonlinear resistance-interpolation function for HP-type memristors, enhancing modeling accuracy and applicability to complementary resistive switches.

Findings

The nonlinear model accurately simulates resistive switching behavior.

Analytical solutions demonstrate the model's effectiveness.

Nonlinearity improves the representation of filament protrusions.

Abstract

Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS). Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, and thereby expand the original HP-memristor. We numerically simulate and analytically solve this model. Further, the nonlinearity allows for its application to the CRS.