Nitride Multilayers as a Platform for Parallel Two-Dimensional Electron-Hole Gases: MgO/ScN(111)
Antia S. Botana, Victor Pardo, Warren E. Pickett

TL;DR
This paper proposes using nitride-oxide heterostructures, specifically MgO/ScN(111), to realize parallel two-dimensional electron and hole gases, enabling exploration of novel quantum states and superconductivity.
Contribution
It introduces a new class of nitride-oxide heterostructures capable of hosting spatially separated 2D electron and hole gases, with detailed ab initio calculations supporting their potential.
Findings
Spatially separated 2D electron and hole gases observed after 5 ScN layers
Higher density of transition metal ions at (111) interface enhances carrier density
Guidance provided for experimental realization of nitride-based conducting gases
Abstract
At interfaces between insulating oxides LaAlO and SrTiO, a two dimensional electron gas (2DEG) has been observed and well studied, while the predicted hole gas (2DHG) has not been realized due to the strong tendency of holes in oxygen orbitals to localize. Here we propose, via ab initio calculations, an unexplored class of materials for the realization of parallel two dimensional (2D), two carrier (electron+hole) gases: nitride-oxide heterostructures, with (111)-oriented ScN and MgO as the specific example. Beyond a critical thickness of five ScN layers, this interface hosts spatially separated conducting Sc- electrons and N- holes, each confined to two atomic layers -- the transition metal nitride provides both gases. A guiding concept is that the N anion should promote robust two carrier 2D hole conduction compared to that of O; metal…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
