Electronic transport under hydrostatic pressure and peculiar properties of the impurity energy spectrum in semiconductor arsenides of n-type: InAs, CdSnAs2, CdGeAs2 and GaAs

TL;DR

This study investigates how hydrostatic pressure affects electronic transport and impurity energy levels, specifically native arsenic vacancies, in various n-type arsenide semiconductors like InAs, GaAs, CdSnAs2, and CdGeAs2.

Contribution

It provides detailed analysis of vacancy energy levels and their pressure dependence, revealing native arsenic vacancies as deep donor levels in these materials.

Findings

Deep donor levels are associated with native arsenic vacancies.

Vacancy energy levels and their pressure coefficients are characterized.

Pressure influences the kinetic coefficients and impurity spectrum in these semiconductors.

Abstract

The energy spectrum of vacancies in n-type bulk crystals of undoped arsenides: InAs, GaAs, CdSnAs2 and CdGeAs2 has been investigated upon the data on pressure and temperature dependences of kinetic coefficients. It is concluded, that deep donor levels correspond to native vacancies of arsenic in these semiconductor materials. The vacancy level positions in the energy scale relatively to the conductivity band edge and their pressure coefficients are defined.