Multi-level Resistive Switching Characteristics of W/Co:TiO2/FTO Structures
Haitao Tang, Zhi Luo, Zhao Yang, Bin Yang, Bo Huang, and Weiguang Xie
TL;DR
This paper investigates multi-level resistive switching in W/Co:TiO2/FTO structures, demonstrating reproducible multi-state memory capabilities with fast switching and simplified control, advancing nonvolatile memory technology.
Contribution
It introduces a multi-mixed mechanism enabling reproducible multi-level resistive switching in W/Co:TiO2/FTO devices, allowing direct switching between states.
Findings
Devices can be programmed into three distinct resistance states.
Direct switching between any two resistance states is achievable.
Multi-level switching enhances memory operation speed and reduces circuit complexity.
Abstract
In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states. And the directly switching between any resistance states was realized. This increases the operation speed and lowers the complexity of control circuit of multi-state nonvolatile memory.
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Machine Learning and ELM