High thermoelectric performance of distorted Bismuth (110) layer

TL;DR

This study demonstrates that distorted bismuth (110) layers exhibit exceptionally high thermoelectric efficiency, with a maximum ZT of 6.4, due to weak electron scattering and favorable transport properties, making them promising for thermoelectric applications.

Contribution

The paper introduces the high thermoelectric performance of distorted bismuth (110) layers, highlighting the role of electron-phonon interactions and quasiparticle corrections in achieving high ZT values.

Findings

Maximum ZT of 6.4 for n-type system

High ZT maintained over broad temperature and carrier ranges

Deformation potential constant is key for high thermoelectric performance

Abstract

The thermoelectric properties of distorted bismuth (110) layer are investigated using first-principles calculations combined with the Boltzmann transport equation for both electrons and phonons. To accurately predict the electronic and transport properties, the quasiparticle corrections with the GW approximation of many-body effects have been explicitly included. It is found that a maximum ZT value of 6.4 can be achieved for n-type system, which is essentially stemmed from the weak scattering of electrons. Moreover, we demonstrate that the distorted Bi layer remains high ZT values at relatively broad regions of both temperature and carrier concentration. Our theoretical work emphasizes that the deformation potential constant characterizing the electron-phonon scattering strength is an important paradigm for searching high thermoelectric performance materials.