Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1-xSnxSe
K. Dybko, P. Pfeffer, M. Szot, A. Szczerbakow, A. Reszka, T. Story,, and W. Zawadzki

TL;DR
This study investigates the Nernst-Ettingshausen effect and electron mobility in Pb$_{1-x}$Sn$_x$Se alloys, revealing a maximum effect at the band gap zero crossing and providing new insights into transport in topological crystalline insulators.
Contribution
It presents the first combined experimental and theoretical analysis of the N-E effect near the trivial-nontrivial band transition in topological crystalline insulators, including handling of singular transport behavior.
Findings
N-E effect peaks at zero band gap crossing
Contradicts previous claims of sign change in N-E effect
Develops a method to address singularities in transport calculations
Abstract
The transverse Nernst Ettingshausen (N-E) effect and electron mobility in PbSnSe alloys are studied experimentally and theoretically as functions of temperature and chemical composition in the vicinity of vanishing energy gap . The study is motivated by the recent discovery that, by lowering the temperature, one can change the band ordering from trivial to nontrivial one in which the topological crystalline insulator states appear at the surface. Our work presents several new aspects. It is shown experimentally and theoretically that the bulk N-E effect has a maximum when the energy gap of the mixed crystal goes through zero value. This result contradicts the claim made in the literature that the N-E effect changes sign when the gap vanishes. We successfully describe transport effects in the situation of extreme band's nonparabolicity which, to the best of…
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