Optical Properties of ITO/ZnO Schottky Diode with Enhanced UV Photoresponse
Hsin-Yen Lee, Ming-Yau Chern
TL;DR
This study investigates the optical properties and UV photoresponse enhancement of ITO/ZnO Schottky diodes, linking defect engineering via H2O2 treatment to improved UV photocurrent performance.
Contribution
It introduces a method to enhance UV photoresponse in ITO/ZnO Schottky diodes through defect control using H2O2 treatment and defect-induced gain mechanisms.
Findings
Successful oxidation of ZnO surface confirmed by PL spectra
Enhanced UV photocurrent observed in treated Schottky diodes
Proposed defect-induced gain mechanism explains high UV optical response
Abstract
Photoluminescence (PL) spectra of zinc oxide (ZnO) samples with different hydrogen peroxide (H2O2) treatment durations were measured to examine several point defects on the surface of the films. These results suggest successful oxidation through the reaction between oxygen radicals dissociated from H2O2 and the ZnO surface. To further confirm the defect induced gain mechanism, we fabricate highly transparent Schottky diodes, and measure the key diode characteristics. Photocurrents are measured under different wavelengths, and possible explanations of the high optical gain within the ultraviolet (UV) region are provided.
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