Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

TL;DR

This paper demonstrates room-temperature Coulomb blockade in a three-terminal graphene single-electron transistor fabricated via feedback-controlled electroburning, with enhanced gate coupling enabling effective control at low voltages.

Contribution

The authors introduce a fabrication method for graphene SETs with high gate coupling, enabling room-temperature operation and precise tuning of electronic states.

Findings

Achieved Coulomb blockade at room temperature in graphene SETs.

Enhanced gate coupling up to three times larger than back gate.

Potential for all-graphene and single-molecule transistors.

Abstract

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.