Cryogenic silicon detectors with implanted contacts for the detection of visible photons using the Neganov-Luke Effect

TL;DR

This paper introduces a novel cryogenic silicon detector with implanted contacts that leverages the Neganov-Luke Effect to enhance light detection sensitivity for astroparticle physics, addressing charge trapping issues.

Contribution

The work presents the first implementation of a Neganov-Luke Effect detector with an improved electric field configuration to enhance charge collection in silicon.

Findings

Demonstrated improved charge collection efficiency

Achieved amplification of thermal signals at cryogenic temperatures

Addressed charge trapping problems in silicon detectors

Abstract

There is a common need in astroparticle experiments such as direct dark matter detection, 0{\nu}\b{eta}\b{eta} (double beta decay without emission of neutrinos) and Coherent Neutrino Nucleus Scattering experiments for light detectors with a very low energy threshold. By employing the Neganov-Luke Effect, the thermal signal of particle interactions in a semiconductor absorber operated at cryogenic temperatures, can be amplified by drifting the photogenerated electrons and holes in an electric field. This technology is not used in current experiments, in particular because of a reduction of the signal amplitude with time which is due to trapping of the charges within the absorber. We present here the first results of a novel type of Neganov-Luke Effect detector with an electric field configuration designed to improve the charge collection within the semiconductor.