Fermi Surfaces and $p$-$d$ Hybridization in the Diluted Magnetic Semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy
H. Suzuki, G. Q. Zhao, K. Zhao, B. J. Chen, M. Horio, K. Koshiishi, J., Xu, M. Kobayashi, M. Minohara, E. Sakai, K. Horiba, H. Kumigashira, Bo Gu, S., Maekawa, Y. J. Uemura, C. Q. Jin, and A. Fujimori

TL;DR
This study uses angle-resolved photoemission spectroscopy to analyze the electronic structure of the diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$, revealing its Fermi surfaces, band hybridization, and differences from GaMnAs.
Contribution
It provides detailed experimental insights into the electronic structure and impurity bands of Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$, highlighting differences from GaMnAs.
Findings
Identification of hole and electron pockets explaining metallic transport.
Observation of Mn $3d$ impurity band below the valence band maximum.
Strong hybridization between Mn $3d$ and As $4p$ orbitals influences ferromagnetism.
Abstract
The electronic structure of the new diluted magnetic semiconductor BaK(ZnMn)As (, ) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). %High density of states of nondispersive bands composed of the Zn orbitals are observed with ultraviolet incident light. Measurements with soft x-rays clarify the host valence-band electronic structure primarily composed of the As states. Two hole pockets around the point, a hole corrugated cylinder surrounding the and Z points, and an electron pocket around the Z point are observed, and explain the metallic transport of BaK(ZnMn)As. This is contrasted with GaMnAs (GaMnAs), where it is located above the As valence-band maximum (VBM) and no Fermi surfaces have been…
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