Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

TL;DR

This paper introduces a bilayer graphene electrostatically doped TFET that achieves ultra-low power, high performance, steep subthreshold swing, and electrical configurability without chemical doping, promising for energy-efficient electronics.

Contribution

It proposes a novel BED-TFET design that leverages vertical electric fields for doping, avoiding edge state issues of nanoribbon TFETs, and demonstrates its superior performance through simulations.

Findings

ION/IOFF > 10^4 achieved

Subthreshold swing < 10 mV/dec

Device is electrically configurable between N- and P-TFET

Abstract

A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on different bandgaps induced by vertical electric fields in the source, channel, and drain regions without any chemical doping. The performance of the transistor is evaluated by self-consistent quantum transport simulations. This device has several advantages: 1) ultra-low power (VDD=0.1V), 2) high performance (ION/IOFF>104), 3) steep subthreshold swing (SS<10mv/dec), and 4) electrically configurable between N-TFET and P-TFET post fabrication. Here, the operation principle of the BED-TFET and its performance sensitivity to the device design parameters are studied.