Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

TL;DR

This paper demonstrates the fabrication of a van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide Fe0.25TaS2, showing spin-polarized tunneling and tunnel magnetoresistance.

Contribution

It introduces a novel vdW junction with ferromagnetic layered dichalcogenide and demonstrates spin-polarized tunneling in such structures.

Findings

Observation of tunnel magnetoresistance under magnetic field

Successful exfoliation and assembly of Fe0.25TaS2 flakes

Evidence of spin-polarized tunneling through vdW junctions

Abstract

We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material through the vdW junction.