Non-Markovian Effects in the Spin Transfer Dynamics in Diluted Magnetic Semiconductors due to Excitation in Proximity to the Band Edge

TL;DR

This paper demonstrates that non-Markovian effects in spin transfer dynamics of diluted magnetic semiconductors, caused by excitation near the band edge, can be effectively modeled using a simplified single-electron theory with finite memory.

Contribution

The study shows that a simpler effective single-electron theory with finite memory can accurately reproduce complex non-Markovian spin dynamics in semiconductors.

Findings

Non-Markovian effects are linked to spectral proximity to the band edge.

A differential transform method efficiently solves the integro-differential equations.

The simplified model matches quantum kinetic calculations well.

Abstract

The non-Markovian effects in the spin dynamics in diluted magnetic semiconductors found in quantum kinetic calculations can be reproduced very well by a much simpler effective single electron theory, if a finite memory is accounted for. The resulting integro-differential equation can be solved by a differential transform method, yielding the Taylor series of the solution. From the comparison of both theories it can be concluded that the non-Markovian effects are due to the spectral proximity of the excited electrons to the band edge.