High-resolution birefringence cartography of a vertical cavity semiconductor laser
T. Wang, G. L. Lippi

TL;DR
This paper introduces a high-resolution polarization-resolved imaging technique to map birefringence in vertical cavity semiconductor lasers, providing detailed local wavelength and polarization information for advanced laser analysis.
Contribution
It combines a double-channel imaging method with polarization analysis to enable detailed birefringence mapping in VCSELs, a novel approach for laser characterization.
Findings
High-resolution polarization-resolved wavelength mapping
Detailed local birefringence and wavelength shift analysis
Potential applications to other optical samples
Abstract
We couple a double-channel imaging technique, allowing for the simultaneous acquisition of high-quality and high-resolution intensity and peak emission wavelength profiles [T. Wang and G.L. Lippi, Rev. Sci. Instr. 86, 063111 (2015)], to the polarization-resolved analysis of the optical emission of a multimode VCSEL. Detailed information on the local wavelength shifts between the two polarized components and on the wavelength gradients can be easily gathered. A polarization- and position-resolved energy balance can be constructed for each wavelength component, allowing in a simple way for a direct analysis of the collected light. Applications to samples, other than VCSELs, are suggested.
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Taxonomy
TopicsSemiconductor Lasers and Optical Devices · Photonic and Optical Devices · Spectroscopy and Laser Applications
