Ultra-fast perpendicular Spin Orbit Torque MRAM

TL;DR

This paper demonstrates ultra-fast, low-power perpendicular SOT-MRAM switching at 400 ps, highlighting its potential for high-speed, energy-efficient non-volatile cache memory applications.

Contribution

It introduces a three-terminal perpendicular SOT-MRAM with switching times down to 400 ps and analyzes the energy efficiency at nanosecond pulse durations.

Findings

Switching time as low as 400 ps

Critical current density increases with shorter pulses

Minimum write energy occurs in the nanosecond range

Abstract

We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which renders it promising for non-volatile cache memory applications.