Veselago lensing in graphene with a p-n junction: classical versus quantum effects

TL;DR

This paper explores Veselago lensing in graphene p-n junctions through numerical simulations, analyzing classical and quantum effects, and assessing robustness against various scattering mechanisms and device configurations.

Contribution

It provides a detailed numerical study comparing classical and quantum effects in Veselago lensing in graphene p-n junctions, including the impact of impurities and device parameters.

Findings

Distinctive transmission peak attributed to Veselago lensing observed

Lensing robustness depends on injector width and interface position

Scattering effects influence the lensing efficiency

Abstract

The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface and different gate potential profiles. Furthermore, the influence of scattering by both short- and long-range impurities is considered.