Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

TL;DR

This paper presents a novel hybrid nanophotonic structure integrating silicon-vacancy centers in diamond with group IV semiconductors, enabling high-quality quantum emitters suitable for quantum information processing.

Contribution

It introduces a new method for synthesizing diamond structures with SiV$^-$ centers without ion implantation, compatible with nanophotonic device fabrication.

Findings

High-quality SiV$^-$ centers with narrow linewidths in nanostructures

Successful integration of SiV$^-$ centers into diamond nanostructures

Optically active SiV$^-$ lines observed at room and low temperatures

Abstract

We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are realized by combining the growth of nanoand micro-diamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV$^-$ color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ionimplantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV$^-$ on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV$^-$ centers. Scanning confocal photoluminescence measurements reveal optically active SiV$^-$ lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow linewidths and small inhomogeneous broadening of SiV$^-$ lines from all-diamond nano-pillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV$^-$ centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.