Direct Detection of sub-GeV Dark Matter with Semiconductor Targets
Rouven Essig, Marivi Fernandez-Serra, Jeremy Mardon, Adrian Soto,, Tomer Volansky, Tien-Tien Yu

TL;DR
This paper explores the potential of semiconductor detectors like silicon and germanium to detect sub-GeV dark matter via electron scattering, providing theoretical calculations, experimental sensitivity estimates, and the first direct detection limits from DAMIC data.
Contribution
It offers the first detailed theoretical calculation of dark matter-electron scattering rates in semiconductors and provides publicly available code for experimental sensitivity analysis.
Findings
Upcoming experiments could vastly improve current constraints.
Sub-GeV dark matter may produce detectable modulation signals.
First direct detection limits from DAMIC data on silicon.
Abstract
Dark matter in the sub-GeV mass range is a theoretically motivated but largely unexplored paradigm. Such light masses are out of reach for conventional nuclear recoil direct detection experiments, but may be detected through the small ionization signals caused by dark matter-electron scattering. Semiconductors are well-studied and are particularly promising target materials because their band gaps allow for ionization signals from dark matter as light as a few hundred keV. Current direct detection technologies are being adapted for dark matter-electron scattering. In this paper, we provide the theoretical calculations for dark matter-electron scattering rate in semiconductors, overcoming several complications that stem from the many-body nature of the problem. We use density functional theory to numerically calculate the rates for dark matter-electron scattering in…
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Taxonomy
TopicsDark Matter and Cosmic Phenomena · Advanced Semiconductor Detectors and Materials · Atomic and Subatomic Physics Research
