Optical and electronic properties of some binary semiconductors from energy gaps

TL;DR

This paper investigates the optical and electronic properties of II-VI and III-V tetrahedral semiconductors using empirical models based on energy gaps, proposing new relations for refractive index and electronic polarizability that align well with known data.

Contribution

It introduces new empirical relationships for refractive index and electronic polarizability of binary semiconductors based on energy gap analysis.

Findings

Calculated properties agree with experimental data

Proposed empirical relation for electronic polarizability

Validated models across a wide energy gap range

Abstract

II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap.