Evolution of high-temperature superconductivity from low-Tc phase tuned by carrier concentration in FeSe thin flakes
B. Lei, J. H. Cui, Z. J. Xiang, C. Shang, N. Z. Wang, G. J. Ye, X. G., Luo, T. Wu, Z. Sun, X. H. Chen

TL;DR
This study demonstrates that systematic electron doping in FeSe thin flakes can induce high-temperature superconductivity up to 48 K, revealing a Lifshitz transition and advancing understanding of superconductivity mechanisms in FeSe-based materials.
Contribution
First to show that simple electron doping via liquid-gating can induce high Tc up to 48 K in FeSe thin flakes without external pressure or interfaces.
Findings
High Tc of 48 K achieved through electron doping.
Superconductivity undergoes a Lifshitz transition at a critical carrier concentration.
Electron doping alone can induce high-temperature superconductivity in FeSe.
Abstract
In contrast to bulk FeSe superconductor, heavily electron-doped FeSe-derived superconductors show relatively high Tc without hole Fermi surfaces and nodal superconducting gap structure, which pose great challenges on pairing theories in the iron-based superconductors. In the heavily electron-doped FeSe-based superconductors, the dominant factors and the exact working mechanism that is responsible for the high Tc need to be clarified. In particular, a clean control of carrier concentration remains to be a challenge for revealing how superconductivity and Fermi surface topology evolves with carrier concentration in bulk FeSe. Here, we report the evolution of superconductivity in the FeSe thin flake with systematically regulated carrier concentrations by liquid-gating technique. High-temperature superconductivity at 48 K can be achieved only with electron doping tuned by gate voltage in…
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Taxonomy
TopicsIron-based superconductors research · Intellectual Capital and Performance Analysis
