The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)
Shin Watanabe (1,2), Hiroyasu Tajima (3), Yasushi Fukazawa (4), Yuto, Ichinohe (1,2), Shin'ichiro Takeda (1), Teruaki Enoto (5), Taro Fukuyama, (1,2), Shunya Furui (4), Kei Genba (6), Kouichi Hagino (1,2), Astushi, Harayama (1), Yoshikatsu Kuroda (6), Daisuke Matsuura (6)

TL;DR
The paper details the design, fabrication, and performance evaluation of a hybrid Si/CdTe semiconductor Compton camera for the ASTRO-H SGD, achieving high efficiency, excellent energy resolution, and low background for gamma-ray detection.
Contribution
It presents the final design and prototype performance of a novel Si/CdTe semiconductor Compton camera for space gamma-ray observation.
Findings
Detection efficiency of 15% at 100 keV and 3% at 511 keV
Energy resolution of 1.0-2.0 keV at 60 keV and 1.6-2.5 keV at 122 keV
Achieved background rejection and confirmed low intrinsic background
Abstract
The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60--600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm x 12 cm x 12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches…
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