Junction-Less Monolayer MoS2 FETs

TL;DR

This paper presents a novel junction-less monolayer MoS2 FET design, demonstrating superior electrostatics and higher ON-current at ultra-scaled dimensions through quantum transport simulations, while highlighting mobility degradation challenges.

Contribution

It introduces a junction-less MoS2 FET concept and evaluates its performance at 5.9 nm channel length, showing advantages over conventional FETs and identifying key technological issues.

Findings

Junction-less MoS2 FETs have better electrostatics.

Higher ON-current at high doping densities.

Mobility degradation due to impurity scattering.

Abstract

This paper introduces monolayer molybdenum disulfide (MoS2) based junction-less (JL) field-effect transistor (FET) and evaluates its performance at the smallest foreseeable (5.9 nm) transistor channel length as per the International Technology Roadmap for Semiconductors (ITRS), by employing rigorous quantum transport simulations. By comparing with MoS2 based conventional FETs, it is found that the JL structure naturally lends MoS2 FETs with superior device electrostatics, and higher ON-current for both high-performance and low-standby-power applications, especially at high impurity doping densities. Along with the advantages of the MoS2 JL-FETs, the effects of impurity scattering induced carrier mobility degradation of JL-FETs is also highlighted as a key technological issue to be addressed for exploiting their unique features.