Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS$_2$
Antonija Grubi\v{s}i\'c \v{C}abo, Jill A. Miwa, Signe S. Gr{\o}nborg,, Jonathon M. Riley, Jens C. Johannsen, Cephise Cacho, Oliver Alexander,, Richard T. Chapman, Emma Springate, Marco Grioni, Jeppe V. Lauritsen, Phil D., C. King, Philip Hofmann, S{\o}ren Ulstrup
TL;DR
This study uses advanced spectroscopy to directly observe ultrafast free carrier dynamics in single-layer MoS₂, revealing rapid carrier extraction crucial for optoelectronic device performance.
Contribution
It provides the first direct measurement of free carrier dynamics in single-layer MoS₂ using time- and angle-resolved photoemission spectroscopy.
Findings
Direct quasiparticle band gap of 1.95 eV
Ultrafast (50 fs) carrier extraction observed
Implications for optoelectronic applications
Abstract
The dynamics of excited electrons and holes in single layer (SL) MoS have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.
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