Charging graphene nanoribbon quantum dots

TL;DR

This paper models the charging behavior of quantum dots in graphene nanoribbons using a tight-binding approach with electron-electron interactions, aligning well with experimental observations and exploring charge localization under various gating conditions.

Contribution

It introduces a detailed numerical model for quantum dot charging in graphene nanoribbons, including electron interactions and screening effects, which advances understanding of charge localization and transport gaps.

Findings

Charge can be delocalized or localized depending on gate voltages.

Transport gaps depend on external confinement and Fermi energy.

Model results agree qualitatively with experimental data.

Abstract

We describe charging a quantum dot induced electrostatically within a semiconducting graphene nanoribbon by electrons or holes. The applied model is based on a tight-binding approach with the electron-electron interaction introduced by a mean field local spin density approximation. The numerical approach accounts for the charge of all the $p_z$ electrons and screening of external potentials by states near the charge neutrality point. Both a homogenous ribbon and a graphene flake embedded within the ribbon are discussed. The formation of transport gaps as functions of the external confinement potential (top gate potential) and the Fermi energy (back gate potential) are described in good qualitative agreement with the experimental data. For a fixed number of excess electrons we find that the excess charge added to the system is, - depending on the voltages defining the work point of the device: $(i)$ delocalized outside the quantum dot, - in the transport gap due to the top gate potential $(ii)$ localized inside the quantum dot, - in the transport gap due to the back gate potential or $(iii)$ extended over both the quantum dot area and the ribbon connections, - outside the transport gaps. The applicability of the frozen valence band approximation to describe charging the quantum dot by excess electrons is also discussed.