G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors

TL;DR

This paper analytically calculates the Lande g-factors of hole bound states in cubic semiconductors, considering the effects of strong spin-orbit interaction and effective spin 3/2, which are crucial for understanding their magnetic response.

Contribution

It provides a comprehensive analytical method to determine g-factors of all bound states of holes in spherically symmetric potentials in cubic semiconductors, accounting for complex spin interactions.

Findings

Analytical expressions for g-factors of hole bound states.

Identification of the influence of spin 3/2 and spin-orbit coupling.

Application to acceptors and quantum dots in cubic semiconductors.

Abstract

Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential, this can be an acceptor or a spherically symmetric quantum dot. Linear response to an external magnetic field is characterized by the bound state Lande g-factor. We calculate analytically g-factors of all bound states.