Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance

TL;DR

This paper reports the development of ambipolar black phosphorus MOSFETs with record n-channel transconductance, demonstrating significant potential for high-performance black phosphorus-based logic circuits.

Contribution

It introduces ambipolar black phosphorus MOSFETs with record n-channel transconductance, highlighting their potential for advanced logic applications.

Findings

Record n-channel transconductance of 66-80 uS/um after passivation

Devices exhibit ambipolar behavior with high performance

Potential for black phosphorus complementary logic circuits

Abstract

Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multi-layer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before passivation, devices with 0.3-um gate length behaved as p-MOSFETs with peak extrinsic transconductance, gm, of 282 uS/um at VDS = -2 V. After passivation, the same devices displayed ambipolar behavior, and when tested as n-MOSFETs, had peak gm = 66 uS/um at VDS = +2 V, and similar devices on the same wafer had gm as high as 80 uS/um. These results are an important step toward realization of high-performance black phosphorus complementary logic circuits.