Spectral evolution with doping of an antiferromagnetic Mott state
Huan-Kuang Wu, Ting-Kuo Lee

TL;DR
This study investigates how doping affects the spectral properties of an antiferromagnetic Mott insulator using advanced numerical methods, revealing in-gap states that evolve with doping and relate to Coulomb interactions.
Contribution
It introduces a diagonalization approach on top of VMC to analyze spectral evolution in doped Mott insulators, aligning theoretical results with recent experimental observations.
Findings
In-gap states appear with doping, consistent with STS experiments.
In-gap states gain spectral weight from the upper Hubbard band.
The energy scale of in-gap states relates to Coulomb interaction U.
Abstract
Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted many research attentions. There were many theoretical works using different numerical techniques to study this problem, but many have reached different conclusions. One of the reasons is the lack of very detailed high-resolution experimental results for the theories to be compared with. Recently, the scanning tunneling spectroscopy (STS)\cite{cai2015visualizing,ye2013visualizing} on lightly doped Mott insulator with an antiferromagnetic (AFM) order found the presence of in-gap states with energy of order half an eV above the chemical potential. The measured spectral properties with doping are not quite consistent with earlier theoretical works. In this paper we perform a diagonalization method on top of the variational Monte Carlo…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
