A novel structure designed for high density nonvolatile memory devices

TL;DR

This paper proposes a new device structure for high-density nonvolatile memory that enhances charge injection, memory window, and retention time by using a top gate electrode, addressing scaling challenges with high-k materials.

Contribution

A novel memory device structure with a top gate electrode that improves charge injection and retention, offering a solution beyond simply replacing materials.

Findings

High charge injection efficiency achieved

Large memory window demonstrated

Long retention time expected

Abstract

The same as in microprocessor fabrication, nonvolatile memory devices are facing the problem in device size scaling down, such as large leakage current density. High-k materials are considered to solve it. However, simply replacing low-k to high-k materials, while keeping the structure as before, is not a good solution. Based on our analysis, we proposed a novel structure, in which charges are injected from top gate electrode. In this structure, high charge injection, large memory window and long retention time can be expected.