Reducing parasitic capacitance of strained Si nano p-MOSFET by control of virtual substrate doping

TL;DR

This paper proposes a novel method using increased virtual substrate doping to eliminate parasitic channels in strained Si p-MOSFETs, thereby reducing parasitic capacitance and improving high-frequency performance, validated through 2D simulations.

Contribution

It introduces a doping control technique to suppress parasitic channels in strained Si p-MOSFETs, enhancing device performance.

Findings

Increased virtual substrate doping reduces parasitic channel formation.

Elimination of the parasitic channel decreases parasitic capacitance.

Simulation results confirm improved high-frequency response.

Abstract

Biaxially strained Si channel p-MOSFETs on virtual SiGe substrates suffer from a parasitic parallel channel in virtual substrate. This channel participates in current passing through the devices and increases parasitic capacitors which degrades the high frequency response. In this paper a new approach has been introduced to eliminate the channel which in turn reduces parasitic capacitors of the MOSFET. It is illustrated that, increasing virtual substrate doping, can reduce and finally eliminate this unintentional channel. In this work 2D simulation has been used to investigate the impact of the proposed method.