Silicon Superconducting Quantum Interference Device
Jean-Eudes Duvauchelle, Ana\"is Francheteau, Christophe Marcenat, and Francesca Chiodi, Dominique D\'ebarre, Klaus Hasselbach, John R., Kirtley, Fran\c{c}ois Lefloch
TL;DR
This paper reports the development and characterization of a silicon-based superconducting quantum interference device (SQUID) fabricated from heavily boron-doped silicon, demonstrating magnetic flux modulation consistent with theoretical models.
Contribution
It introduces a novel silicon-based SQUID using a single-layer doped silicon film, combining fabrication and experimental validation with theoretical simulations.
Findings
Demonstrates magnetic flux modulation at low temperature and magnetic field.
Shows good agreement between experimental data and Ginzburg-Landau simulations.
Presents a new approach for silicon-based superconducting quantum devices.
Abstract
We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser Doping (GILD) technique. The SQUID device is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.
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