Spin orbit splitting of the photon induced Fano Resonance in an oscillating graphene electrostatic barrier

TL;DR

This paper theoretically explores how a time-dependent oscillating potential and Rashba spin orbit interaction influence photon-assisted tunneling in graphene, revealing spin-split Fano resonances controllable by external parameters with potential spintronic applications.

Contribution

It introduces a non-perturbative Floquet approach to analyze Rashba spin orbit effects on photon-induced Fano resonances in oscillating graphene barriers, highlighting external control possibilities.

Findings

Rashba interaction causes splitting of Fano resonances.

The separation of spin-split Fano resonances indicates quasihole bound state structure.

Spin polarization of Floquet sidebands is highly sensitive to spin pseudospin interactions.

Abstract

We investigate theoretically the effect of a time dependent oscillating potential on the transport property of the Dirac Fermion through a monolayer graphene electrostatic barrier under the influence of the Rashba spin orbit interaction. The time dependent problem is solved in the frame work of the non perturbative Floquet approach. It is noted that the dynamic condition of the barrier may be controlled by tuning the Rashba parameter. Introduction of the spin orbit interaction causes splitting of the Fano resonance(FR), a characteristic feature in photon assisted tunneling. The separation between the spin split FR gives an indirect measure of the fine structure of the quasihole bound state inside the barrier. The present findings on the Rashba splitting of the FR and its external control by tuning the oscillating field parameters might have potential for applications in spintronic devices, especially in the spin field effect transistors. The spin polarization of different Floquet sidebands is found to be quite sensitive to the spin pseudospin interaction.