Donor Wavefunctions in Si Gauged by STM Images
A. L. Saraiva, J. Salfi, J. Bocquel, B. Voisin, S. Rogge, Rodrigo B., Capaz, M.J. Calder\'on, and Belita Koiller

TL;DR
This paper uses STM images to experimentally probe and validate the shape and properties of donor wavefunctions in silicon, confirming the applicability of Kohn-Luttinger theory for these wavefunctions.
Contribution
It provides direct experimental evidence of donor wavefunctions in silicon and validates the Kohn-Luttinger model against observed STM patterns and charge density fluctuations.
Findings
Wavefunction shapes resemble Kohn-Luttinger envelopes.
Electron wavevector estimated as 0.82(2π/a_Si).
KL theory accurately predicts wavefunction anisotropy.
Abstract
The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, revealing localized patterns of resonantly enhanced tunneling currents. We show that the shape of the conducting splotches resemble a cut through Kohn-Luttinger (KL) hydrogenic envelopes, which modulate the interfering Bloch states of conduction electrons. All the non-monotonic features of the current profile are consistent with the charge density fluctuations observed between successive {001} atomic planes, including a counterintuitive reduction of the symmetry - a heritage of the lowered point group symmetry at these planes. A model-independent analysis of the diffraction figure constrains the value of the electron wavevector to $k_0 = (0.82…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
