Analysis of radiation effect on the threshold voltage of flash memory device
Nahid M. Hossain, Jitendra Koppu, Masud H Chowdhury
TL;DR
This paper analyzes how radiation affects the threshold voltage of flash memory devices, using a mathematical model to understand the device's behavior under radiation exposure.
Contribution
It introduces a mathematical model to analyze the threshold voltage shift of floating gate transistors caused by radiation.
Findings
Radiation causes significant threshold voltage shifts in flash memory.
The model helps predict device behavior under radiation exposure.
Insights can guide design improvements for radiation-hardened memory.
Abstract
Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of doping, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined region and cause upset and data errors under radiation exposure. In this letter, the threshold voltage shift of the floating gate transistor (FGT) is analyzed by a mathematical model.
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