Dielectric Engineered Tunnel Field-Effect Transistor

TL;DR

This paper proposes a dielectric engineered tunnel FET that achieves high ON-current and subthreshold swing by combining high-k and low-k dielectrics, utilizing a homojunction channel and electrically doped contacts for improved performance.

Contribution

It introduces a novel dielectric engineering approach in TFETs that enhances performance and stability by eliminating interface and dopant-related issues.

Findings

Record ON-current of about 1000 uA/um achieved.

Subthreshold swing below 20 mV/dec predicted.

Device immunity to interface states and dopant fluctuations.

Abstract

The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the band gap which typically deteriorate the OFF-state performance and SS in conventional TFETs.