Interplay between Phonon Confinement and Fano Effect on Raman line shape for semiconductor nanostructures: Analytical study

TL;DR

This paper provides an analytical study of how quantum confinement and Fano effects interact to influence Raman line shapes in semiconductor nanostructures, revealing a non-linear interplay affecting asymmetry.

Contribution

It demonstrates that the combined effect of quantum confinement and Fano effect on Raman line shapes cannot be considered as a simple sum, highlighting their interdependent nature.

Findings

Asymmetry from individual effects does not add linearly in the combined case.

Fano effect depends on quantum confinement, indicating an interplay between the two.

The interplay influences the Raman line shape characteristics in nanostructures.

Abstract

Theoretical Raman line shape functions have been studied to take care of quantum confinement effect and Fano effect individually and jointly. The characteristics of various Raman line shapes have been studied in terms of the broadening and asymmetry of Raman line shapes. It is shown that the asymmetry in the Raman line-shape function caused by these two effects individually does not add linearly to give asymmetry of line-shape generated by considering the combined effect. This indicates existence of interplay between the two effects. The origin of interplay lies in the fact that Fano effect itself depends on quantum confinement effect and in turn provides an asymmetry. This can not be explained by considering the two effects contribution independent of each other.