Raman Cooling of Solids through Photonic Density of States Engineering
Yin-Chung Chen, Gaurav Bahl

TL;DR
This paper proposes a novel approach to laser cooling of solids by engineering the photonic density of states to suppress heating transitions and enhance cooling efficiency, enabling potential refrigeration of semiconductors like silicon.
Contribution
It introduces a general model for DoS modification to Raman scattering, demonstrating the feasibility of net Raman cooling in transparent semiconductors through DoS engineering.
Findings
Photonic DoS engineering can suppress Stokes transitions.
Enhanced anti-Stokes scattering enables net cooling.
Potential to cool silicon and other semiconductors without optical absorption.
Abstract
The laser cooling of vibrational states of solids has been achieved through photoluminescence in rare-earth elements, optical forces in optomechanics, and the Brillouin scattering light-sound interaction. The net cooling of solids through spontaneous Raman scattering, and laser refrigeration of indirect band gap semiconductors, both remain unsolved challenges. Here, we analytically show that photonic density of states (DoS) engineering can address the two fundamental requirements for achieving spontaneous Raman cooling: suppressing the dominance of Stokes (heating) transitions, and the enhancement of anti-Stokes (cooling) efficiency beyond the natural optical absorption of the material. We develop a general model for the DoS modification to spontaneous Raman scattering probabilities, and elucidate the necessary and minimum condition required for achieving net Raman cooling. With a…
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Taxonomy
TopicsOptical properties and cooling technologies in crystalline materials · Thermal Radiation and Cooling Technologies · Advanced Thermodynamics and Statistical Mechanics
