Towards room-temperature single-layer graphene synthesis by C60 Supersonic Molecular Beam Epitaxy

TL;DR

This paper demonstrates a novel method for synthesizing single-layer graphene on copper at 645°C using C60 supersonic molecular beam epitaxy, highlighting the role of high-kinetic energy impacts in enhancing film quality.

Contribution

It introduces a new supersonic molecular beam epitaxy technique for room-temperature graphene synthesis, emphasizing the importance of high-kinetic energy deposition in the process.

Findings

Successful growth of single-layer graphene on copper at 645°C.

High-kinetic energy impacts improve organic/inorganic interface interaction.

Potential applicability to other substrates and lower temperatures.

Abstract

High-kinetic energy impacts between inorganic surfaces and molecular beams seeded by organics represent a fundamental case study in materials science, most notably when they activate chemical-physical processes leading to nanocrystals growth. Here we demonstrate single-layer graphene synthesis on copper by C60 supersonic molecular beam (SuMBE) epitaxy at 645 {\deg}C, with the possibility of further reduction. Using a variety of electron spectroscopy and microscopy techniques, and first-principles simulations, we describe the chemical-physical mechanisms activated by SuMBE resulting in graphene growth. In particular, we find a crucial role of high-kinetic energy deposition in enhancing the organic/inorganic interface interaction, to control the cage openings and to improve the growing film quality. These results, while discussed in the specific case of graphene on copper, are potentially extendable to different metallic or semiconductor substrates and where lower processing temperature is desirable.